Question
Download Solution PDFWhich of the following statements is correct?
Answer (Detailed Solution Below)
Detailed Solution
Download Solution PDFExplanation:
A P-type semiconductor is formed when trivalent impurities or dopant atoms such as indium and gallium are added to an intrinsic semiconductor. The majority of charge carriers are holes, and the minority of charge carriers are electrons in this type of semiconductor. The acceptor level mainly lies nearer to the valence band.
N-type semiconductors are created by adding pentavalent impurities to semiconductor materials like silicon and germanium. This pentavalent impurity can be phosphorus, antimony, or arsenic. The majority of charge carriers are electrons, and the minority of charge carriers are holes in this type of semiconductor. The donor level mainly lies nearer to the conduction band.
Hence, the correct answer is Option 4. In a P-type semiconductor, the acceptor energy level is formed due to the trivalent dopant, and it lies just above the valence band.
Last updated on Jun 19, 2025
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